NPN Silicon Switching Transistors
PZT 2222
PZT 2222 A
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: PZT 2907 (PNP)
PZT 2907 A (PNP)
Type
PZT 2222
PZT 2222 A
Marking
ZT 2222
ZT 2222 A
Ordering Code
(tape and reel)
Q62702-Z2026
Q62702-Z2027
Pin Configuration
1
2
3
4
B
C
E
C
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
=
110 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
87
≤
27
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
PZT 2222
PZT 2222 A
30
60
5
40
75
6
600
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
INFINEON [ INFINEON TECHNOLOGIES AG ]
