PZT 3906
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10
µ
A,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
Collector-emitter cutoff current
V
CE
= 30 V, +
V
BE
= 0.5 V
Collector-base cutoff current
V
CE
= 30 V, +
V
BE
= 0.5 V
DC current gain
1)
I
C
= 0.1 mA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
C
= 1 mA
I
C
= 50 mA,
I
C
= 5 mA
V
(BR)CE0
V
(BR)CB0
V
(BR)EB0
I
CB0
I
CEV
I
BEV
h
FE
60
80
100
60
30
V
CEsat
–
–
V
BEsat
–
–
–
–
0.85
0.95
–
–
0.25
0.4
–
–
–
–
–
–
–
300
–
–
V
40
40
5
–
–
–
–
–
–
–
–
–
–
–
–
50
50
50
–
nA
V
Values
typ.
max.
Unit
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %
Semiconductor Group
2
INFINEON [ INFINEON TECHNOLOGIES AG ]
