PZTA42
NPN Silicon High-Voltage Transistors
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary type: PZTA92 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
4
2
1
3
Type
PZTA42
Maximum Ratings
Parameter
Marking
PZTA42 1=B
Pin Configuration
2=C
3=E
4=C
-
-
Package
SOT223
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
300
300
6
500
100
1.5
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
T
S
≤
124 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
mA
W
°C
Symbol
R
thJS
Value
≤
17
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-26
INFINEON [ INFINEON TECHNOLOGIES AG ]
