TRIOS
®
* PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• High Current Transfer Ratios
SFH601-1, 40 to 80%
SFH601-2, 63 to 125%
SFH601-3 ,100 to 200%
SFH601-4, 160 to 320%
• Isolation Test Voltage (1 Sec.), 5300 VAC
RMS
• VCEsat 0.25 (≤0.4) V, IF=10 mA, IC=2.5 mA
• Built to conform to VDE Requirements
• Highest Quality Premium Device
• Long Term Stability
• Storage Temperature, –55∞ to +150∞C
• Underwriters Lab File #E52744
• CECC Approved
V
•
VDE 0884 Available with Option 1
D E
SFH601 SERIES
Dimensions in inches (mm)
Pin One ID
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The SFH601 is an optocoupler with a Gallium Ars-
enide LED emitter which is optically coupled with a
silicon planar phototransistor detector. The compo-
nent is packeged in a plastic plug-in case 20 AB
DIN 41866.
The coupler transmits signals between two electri-
cally isolated circuits.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current...................................... 60 mA
Surge Forward Current (t
p
=10
µs)..................
2.5 A
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage .............................. 100 V
Emitter-Base Voltage ......................................... 7 V
Collector Current........................................... 50 mA
Collector Current (t=1 ms) .......................... 100 mA
Power Dissipation ...................................... 150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.)..............5300 VAC
RMS
Creepage
........................................................... ≥7
mm
Clearance
.......................................................... ≥7
mm
Isolation Thickness between Emitter and
Detector.......................................................
≥0.4
mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
V
IO
=500 V, T
A
=25°C...................................
≥10
12
Ω
V
IO
=500 V, T
A
=100°C.................................
≥10
11
Ω
Storage Temperature Range........ –55°C to +150°C
Ambient Temperature Range....... –55°C to +100°C
Junction Temperature ....................................100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5
mm) ..........260°C
Characteristics
(T
A
=25°C)
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling Capacitance
V
CEsat
C
IO
0.25 (≤0.4)
0.6
V
pF
I
F
=10 mA,
I
C
=2.5 mA
V
I-O
=0, f=1 MHz
pF
C
CE
C
CB
C
EB
R
THJamb
6.8
8.5
11
500
f=1 MHz
V
CE
=5 V
V
CB
=5 V
V
EB
=5 V
V
F
V
BR
I
R
C
O
R
THJamb
1.25
(≤1.65)
≥6
0.01 (≤10)
25
750
V
V
µA
pF
I
F
=60 mA
I
R
=10
µA
V
R
=6 V
V
F
=0 V, f=1 MHz
Unit
Condition
°
C/W
°
C/W
*TRIOS—TRansparent IOn Shield
5–1
This document was created with FrameMaker 4.0.4
INFINEON [ INFINEON TECHNOLOGIES AG ]
