Final data
SPP06N80C3
SPA06N80C3
V
DS
R
DS(on)
I
D
P-TO220-3-31
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
•
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
800
0.9
6
V
Ω
A
P-TO220-3-1
1
2
3
Type
SPP06N80C3
SPA06N80C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4351
Marking
06N80C3
06N80C3
P-TO220-3-31 Q67040-S4435
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
SPP
I
D
6
3.8
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
18
230
0.2
6
±20
±30
83
Value
SPA
Unit
A
6
1)
3.8
1)
18
230
0.2
6
±20
±30
39
W
°C
A
V
A
mJ
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=1.2A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=6A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
-55...+150
Page 1
2003-07-02