SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
High peak current capability
•
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220FP
PG-TO262
650
0.6
7.3
PG-TO220
2
V
Ω
A
1
23
P-TO220-3-1
•
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP07N60C3
Package
PG-TO220-3
Ordering Code
Q67040-S4400
Marking
07N60C3
07N60C3
07N60C3
SPI07N60C3
PG-TO262
Q67040-S4424
SPA07N60C3
PG-TO220FP
SP000216303
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
A
7.3
4.6
7.3
1)
4.6
1)
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D
puls
21.9
21.9
A
E
AS
E
AR
I
AR
230
0.5
230
0.5
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=7.3A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
7.3
7.3
A
V
GS
±20
±
30
±20
±
30
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
V
GS
P
tot
83
32
W
Operating and storage temperature
Reverse diode dv/dt
6)
Rev.
3.1
Page 1
T
j
,
T
stg
dv/dt
-55...+150
15
°C
V/ns
2007-08-30
INFINEON [ INFINEON TECHNOLOGIES AG ]
