SPP11N60C3
SPI11N60C3, SPA11N60C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
High peak current capability
•
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220-3-31 PG-TO262-3
650
0.38
11
PG-TO220
V
Ω
A
•
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N60C3
SPI11N60C3
SPA11N60C3
Package
PG-TO220-3
PG-TO262-3
Ordering Code
Q67040-S4395
Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
PG-TO220-3-31
SP000216312
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
SPP_I
I
D
11
7
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
dv/dt
Page 1
Value
SPA
Unit
A
11
1)
7
1)
33
340
0.6
11
±20
±30
33
W
°C
V/ns
A
V
A
mJ
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
33
340
0.6
11
±20
±30
125
15
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
Reverse diode dv/dt
7)
Rev. 2.6
-55...+150
2005-09-21
INFINEON [ INFINEON TECHNOLOGIES AG ]
