Final data
SPP11N80C3
SPA11N80C3
V
DS
R
DS(on)
I
D
P-TO220-3-31
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
•
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
800
0.45
11
V
Ω
A
P-TO220-3-1
1
2
3
Type
SPP11N80C3
SPA11N80C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4438
Marking
11N80C3
11N80C3
P-TO220-3-31 Q67040-S4439
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
SPP
I
D
11
7.1
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
33
470
0.2
11
±20
±30
156
Value
SPA
Unit
A
11
1)
7.1
1)
33
470
0.2
11
±20
±30
41
W
°C
A
V
A
mJ
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=2.2A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
-55...+150
Page 1
2003-07-02
INFINEON [ INFINEON TECHNOLOGIES AG ]
