Final data
SPP17N80C3, SPB17N80C3
SPA17N80C3
V
DS
R
DS(on)
I
D
800
0.29
17
V
Ω
A
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Worldwide best
R
DS(on)
in TO 220
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
•
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP17N80C3
SPB17N80C3
SPA17N80C3
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4353
Q67040-S4354
Marking
17N80C3
17N80C3
17N80C3
P-TO220-3-31
1
2
3
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31 Q67040-S4441
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
I
D
17
11
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
51
670
0.5
17
±20
±30
208
Value
SPP_B
SPA
Unit
A
17
1)
11
1)
51
670
0.5
17
±20
±30
42
W
°C
A
V
A
mJ
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=3.4A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=17A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
-55...+150
Page 1
2003-07-03
INFINEON [ INFINEON TECHNOLOGIES AG ]
