Final data
9 Typ. drain-source on resistance
R
DS(on)
=f(I
D
)
parameter:
T
j
=150°C,
V
GS
1.5
SPP17N80C3, SPB17N80C3
SPA17N80C3
10 Drain-source on-state resistance
R
DS(on)
=
f
(T
j
)
parameter :
I
D
= 11 A,
V
GS
= 10 V
1.6
SPP17N80C3
Ω
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0
4V 4.5V 5V
5.5V
6V
6.5V
Ω
1.2
R
DS(on)
7V
8V
10V
20V
R
DS(on)
1
0.8
0.6
0.4
98%
typ
0.2
5
10
15
20
25
A
I
D
35
0
-60
-20
20
60
100
°C
180
T
j
11 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 10 µs
65
12 Typ. gate charge
V
GS
=
f
(Q
Gate
)
parameter:
I
D
= 17 A pulsed
16
SPP17N80C3
A
55
50
25°C
V
12
V
GS
45
0,2
V
DS max
10
I
D
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
150°C
0,8
V
DS max
8
6
4
2
V
20
V
GS
0
0
20
40
60
80
100
120
nC
160
Q
Gate
Page 7
2003-07-03
INFINEON [ INFINEON TECHNOLOGIES AG ]
