SPU02N60S5
SPD02N60S5
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
V
DS
R
DS(on)
I
D
P-TO252.
2
3
1
600
3
1.8
P-TO251.
V
Ω
A
1
2
3
Type
Package
Ordering Code
SPU02N60S5
SPD02N60S5
P-TO251.
P-TO252.
Q67040-S4226
Q67040-S4213
Marking
02N60S5
02N60S5
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
I
D
Value
1.8
1.1
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 1.35 A,
V
DD
= 50 V
I
D puls
E
AS
3.2
50
0.07
1.8
±20
±
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 1.8 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
A
V
W
°C
V
GS
P
tot
T
j ,
T
stg
25
-55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
INFINEON [ INFINEON TECHNOLOGIES AG ]
