欢迎访问ic37.com |
会员登录 免费注册
发布采购

SPD04N60C3 参数 Datasheet PDF下载

SPD04N60C3图片预览
型号: SPD04N60C3
PDF下载: 下载PDF文件 查看货源
内容描述: 酷MOS ™功率晶体管 [Cool MOS™ Power Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 12 页 / 287 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号SPD04N60C3的Datasheet PDF文件第2页浏览型号SPD04N60C3的Datasheet PDF文件第3页浏览型号SPD04N60C3的Datasheet PDF文件第4页浏览型号SPD04N60C3的Datasheet PDF文件第5页浏览型号SPD04N60C3的Datasheet PDF文件第6页浏览型号SPD04N60C3的Datasheet PDF文件第7页浏览型号SPD04N60C3的Datasheet PDF文件第8页浏览型号SPD04N60C3的Datasheet PDF文件第9页  
Final data
SPD04N60C3
SPU04N60C3
V
DS
@
T
jmax
R
DS(on)
I
D
P-TO251
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
650
0.95
4.5
P-TO252
V
A
Type
SPD04N60C3
SPU04N60C3
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4412
-
Marking
04N60C3
04N60C3
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 3.4 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 4.5 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage static
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
V
GS
P
tot
T
j ,
T
stg
4.5
±20
±30
50
-55... +150
W
°C
A
V
0.4
I
D puls
E
AS
Symbol
I
D
4.5
2.8
13.5
130
mJ
Value
Unit
A
Page 1
2003-10-02