Final data
SPD04N60C3
SPU04N60C3
V
DS
@
T
jmax
R
DS(on)
I
D
P-TO251
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
High peak current capability
•
Improved transconductance
650
0.95
4.5
P-TO252
V
Ω
A
Type
SPD04N60C3
SPU04N60C3
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4412
-
Marking
04N60C3
04N60C3
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 3.4 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 4.5 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage static
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
V
GS
P
tot
T
j ,
T
stg
4.5
±20
±30
50
-55... +150
W
°C
A
V
0.4
I
D puls
E
AS
Symbol
I
D
4.5
2.8
13.5
130
mJ
Value
Unit
A
Page 1
2003-10-02