SPW11N80C3
CoolMOS
Features
TM
Power Transistor
Product Summary
V
DS
R
DS(on)max
@ T
j
= 25°C
Q
g,typ
800
0.45
64
V
Ω
nC
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
PG-TO247-3
CoolMOS
TM
800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
SPW11N80C3
Package
PG-TO247-3
Marking
11N80C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
Rev. 2.9
P
tot
T
j
,
T
stg
M2.5 screws
page 1
T
C
=25 °C
T
C
=25 °C
I
D
=2.2 A,
V
DD
=50 V
I
D
=11 A,
V
DD
=50 V
Value
11
7.1
33
470
0.2
11
50
±20
±30
156
-55 ... 150
50
W
°C
Ncm
2008-10-15
A
V/ns
V
mJ
Unit
A
Please note the new package dimensions arccording to PCN 2009-134-A
INFINEON [ INFINEON TECHNOLOGIES AG ]
