Final data
SPW20N60C3
V
DS
@
T
jmax
R
DS(on)
I
D
650
0.19
20.7
P-TO247
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
High peak current capability
•
Improved transconductance
V
Ω
A
Type
SPW20N60C3
Package
P-TO247
Ordering Code
Q67040-S4406
Marking
20N60C3
Maximum Ratings
Parameter
Symbol
I
D
Value
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
A
20.7
13.1
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 50 V
I
D puls
E
AS
62.1
690
1
20
6
±20
±
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 20 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Reverse diode d
v
/d
t
d
v
/d
t
I
S=20.7A,
V
DS=480V,
T
j=125°C
A
V/ns
V
W
°C
2003-09-17
Gate source voltage static
V
GS
V
GS
P
tot
T
j ,
T
stg
Page 1
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
208
-55... +150
INFINEON [ INFINEON TECHNOLOGIES AG ]
