SPW32N50C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
V
DS
@
T
jmax
R
DS(on)
I
D
560
0.11
32
PG-TO247
V
Ω
A
Type
SPW32N50C3
Package
PG-TO247
Ordering Code
Q67040-S4613
Marking
32N50C3
Maximum Ratings
Parameter
Symbol
I
D
Value
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
A
32
20
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 50 V
I
D
puls
E
AS
96
1100
1
20
±20
±
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 20 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
A
V
W
°C
V/ns
V
GS
P
tot
T
j
,
T
stg
dv/dt
284
-55... +150
15
Operating and storage temperature
Reverse diode dv/dt
4)
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
INFINEON [ INFINEON TECHNOLOGIES AG ]
