SPW47N60C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Worldwide best
R
DS(on)
in TO 247
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
V
DS
@
T
jmax
R
DS(on)
I
D
650
0.07
47
P-TO247
V
Ω
A
Type
SPW47N60C3
Package
P-TO247
Ordering Code
Q67040-S4491
Marking
47N60C3
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 20 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage static
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
V
GS
P
tot
T
j ,
T
stg
20
±20
±30
415
-55... +150
W
°C
A
V
1
I
D puls
E
AS
Symbol
I
D
47
30
141
1800
mJ
Value
Unit
A
Page 1
2003-11-06
INFINEON [ INFINEON TECHNOLOGIES AG ]
