28F320J5 and 28F640J5
Table 1.
Symbol
A
0
Lead Descriptions
Type
INPUT
Name and Function
BYTE-SELECT ADDRESS:
Selects between high and low byte when the device is in x8 mode.
This address is latched during a x8 program cycle. Not used in x16 mode (i.e., the A
0
input buffer
is turned off when BYTE# is high).
ADDRESS INPUTS:
Inputs for addresses during read and program operations. Addresses are
internally latched during a program cycle.
32-Mbit: A
0
–A
21
64-Mbit: A
0
–A
22
LOW-BYTE DATA BUS:
Inputs data during buffer writes and programming, and inputs
commands during Command User Interface (CUI) writes. Outputs array, query, identifier, or status
data in the appropriate read mode. Floated when the chip is de-selected or the outputs are
disabled. Outputs DQ
6
–DQ
0
are also floated when the Write State Machine (WSM) is busy. Check
SR.7 (status register bit 7) to determine WSM status.
HIGH-BYTE DATA BUS:
Inputs data during x16 buffer writes and programming operations.
Outputs array, query, or identifier data in the appropriate read mode; not used for status register
reads. Floated when the chip is de-selected, the outputs are disabled, or the WSM is busy.
CHIP ENABLES:
Activates the device’s control logic, input buffers, decoders, and sense
amplifiers. When the device is de-selected (see
power reduces to standby
levels.
All timing specifications are the same for these three signals. Device selection occurs with the first
edge of CE
0
, CE
1
, or CE
2
that enables the device. Device deselection occurs with the first edge of
CE
0
, CE
1
, or CE
2
that disables the device (see
RESET/ POWER-DOWN:
Resets internal automation and puts the device in power-down mode.
RP#-high enables normal operation. Exit from reset sets the device to read array mode. When
driven low, RP# inhibits write operations which provides data protection during power transitions.
RP# at V
HH
enables master lock-bit setting and block lock-bits configuration when the master
lock-bit is set. RP# = V
HH
overrides block lock-bits thereby enabling block erase and
programming operations to locked memory blocks. Do not permanently connect RP# to V
HH
.
OUTPUT ENABLE:
Activates the device’s outputs through the data buffers during a read cycle.
OE# is active low.
WRITE ENABLE:
Controls writes to the Command User Interface, the Write Buffer, and array
blocks. WE# is active low. Addresses and data are latched on the rising edge of the WE# pulse.
STATUS:
Indicates the status of the internal state machine. When configured in level mode
(default mode), it acts as a RY/BY# pin. When configured in one of its pulse modes, it can pulse to
indicate program and/or erase completion. For alternate configurations of the STATUS pin, see
the Configurations command. Tie STS to V
CCQ
with a pull-up resistor.
BYTE ENABLE:
BYTE# low places the device in x8 mode. All data is then input or output on
DQ
0
–DQ
7
, while DQ
8
–DQ
15
float. Address A
0
selects between the high and low byte. BYTE# high
places the device in x16 mode, and turns off the A
0
input buffer. Address A
1
then becomes the
lowest order address.
ERASE / PROGRAM / BLOCK LOCK ENABLE:
For erasing array blocks, programming data, or
configuring lock-bits.
With V
PEN
≤
V
PENLK
, memory contents cannot be altered.
SUPPLY
OUTPUT
BUFFER
SUPPLY
SUPPLY
DEVICE POWER SUPPLY:
With V
CC
≤
V
LKO
, all write attempts to the flash memory are inhibited.
OUTPUT BUFFER POWER SUPPLY:
This voltage controls the device’s output voltages. To
obtain output voltages compatible with system data bus voltages, connect V
CCQ
to the system
supply voltage.
GROUND:
Do not float any ground pins.
NO CONNECT:
Lead is not internally connected; it may be driven or floated.
A
1
–A
22
INPUT
DQ
0
–DQ
7
INPUT/
OUTPUT
DQ
8
–DQ
15
INPUT/
OUTPUT
CE
0
,
CE
1
,
CE
2
INPUT
RP#
INPUT
OE#
WE#
INPUT
INPUT
OPEN
DRAIN
OUTPUT
STS
BYTE#
INPUT
V
PEN
V
CC
V
CCQ
GND
NC
INPUT
Datasheet
9
INTEL [ INTEL CORPORATION ]
