28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
4.4
DC Characteristics
V
CC
2.7 V–3.6 V
2.7 V–3.6 V
Typ
Max
±
1
2.7 V–2.85 V
1.65 V–2.5 V
Typ
Max
±
1
2.7 V–3.3 V
1.8 V–2.5 V
Typ
Max
±
1
µA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
CE# = RP# = V
CCQ
or during Program/
Erase Suspend
WP# = V
CCQ
or GND
1,2
7
15
7
20
7
20
µA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
RP# = GND ± 0.2 V
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# =V
IL
f = 5 MHz, I
OUT
=0 mA
Inputs = V
IL
or V
IH
RP# = GND ± 0.2 V
V
PP
≤
V
CC
V
PP
≤
V
CC
V
PP
> V
CC
V
PP
=V
PP1, 2, 3
Program in Progress
V
PP
= V
PP4
Program in Progress
V
PP
=V
PP1, 2, 3
Program in Progress
V
PP
= V
PP4
Program in Progress
Unit
Test Conditions
Sym
Parameter
V
CCQ
Note
I
LI
Input Load Current
1,2
I
LO
Output Leakage Current
V
CC
Standby Current for
0.18 Micron Product
1,2
±
10
±
10
±
10
µA
1,2
7
15
20
50
150
250
µA
I
CCS
V
CC
Standby Current for
0.25 Micron and
0.4 Micron Product
V
CC
Power-Down Current
for 0.18 Micron Product
1,2
18
35
20
50
150
250
µA
I
CCD
V
CC
Power-Down Current
for 0.25 Micron and
0.4 Micron Product
V
CC
Read Current for
0.18 Micron Product
1,2
7
25
7
25
7
25
µA
1,2,3
9
18
8
15
9
15
mA
I
CCR
V
CC
Read Current for
0.25 and 0.4 Micron
Product
V
PP
Deep Power-Down
Current
V
PP
Read Current
1,2,3
10
18
8
15
9
15
mA
I
PPD
I
PPR
0.2
2
1,4
50
18
1,2,4
8
18
1,2,4
10
5
±15
200
55
15
55
30
0.2
2
50
18
10
18
10
5
±15
200
55
30
55
30
0.2
2
50
18
10
18
10
5
±15
200
55
30
55
30
µA
µA
µA
mA
mA
mA
mA
V
CC
+ V
PP
Program
Current for 0.18 Micron
Product
I
CCW+
I
PPW
V
CC
+ V
PP
Program
Current for 0.25 Micron
and 0.4 Micron Product
20
3UHOLPLQDU\
INTEL [ INTEL CORPORATION ]
