SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE
1.2
Product Overview
Intel provides the most flexible voltage solution in
the flash industry, providing three discrete voltage
supply pins: V
CC
for read operation, V
CCQ
for output
swing, and V
PP
for program and erase operation.
Discrete supply pins allow system designers to use
the optimal voltage levels for their design. All Smart
3 Advanced Boot Block flash memory products
provide program/erase capability at 2.7V or 12V
and read with V
CC
at 2.7V. Since many designs
read from the flash memory a large percentage of
the time, 2.7V V
CC
operation can provide
substantial power savings. The 12V V
PP
option
maximizes program and erase performance during
production programming.
The Smart 3 Advanced Boot Block flash memory
products are high-performance devices with low
power operation. The available densities for word-
wide devices (x16) are
a. 4-Mbit (4,194,304-bit)
flash
memory
organized as 256-Kwords of 16 bits each
b. 8-Mbit (8,388,608-bit)
flash
memory
organized as 512-Kwords of 16 bits each
c. 16-Mbit (16,777,216-bit) flash memory
organized as 1024-Kwords of 16 bits each.
For byte-wide devices (x8) see the
Smart 3
Advanced Boot Block Byte-Wide Flash Memory
Family
datasheet.
The parameter blocks are located at either the top
(denoted by -T suffix) or the bottom (-B suffix) of the
address map in order to accommodate different
microprocessor protocols for kernel code location.
The upper two (or lower two) parameter blocks can
be locked to provide complete code security for
system initialization code. Locking and unlocking is
controlled by WP# (see Section 3.3 for details).
The Command User Interface (CUI) serves as the
interface
between
the
microprocessor
or
microcontroller and the internal operation of the
flash memory. The internal Write State Machine
(WSM) automatically executes the algorithms and
timings necessary for program and erase
operations,
including
verification,
thereby
unburdening the microprocessor or microcontroller.
The status register indicates the status of the WSM
by signifying block erase or word program
completion and status.
Program and erase automation allows program and
erase operations to be executed using an industry-
standard two-write command sequence to the CUI.
Data writes are performed in word increments.
Each word in the flash memory can be programmed
independently of other memory locations; every
erase operation erases all locations within a block
simultaneously. Program suspend allows system
software to suspend the program command in order
to read from any other block. Erase suspend allows
system software to suspend the block erase
command in order to read from or program data to
any other block.
The Smart 3 Advanced Boot Block flash memory is
also designed with an Automatic Power Savings
(APS) feature which minimizes system current
drain, allowing for very low power designs. This
mode is entered immediately following the
completion of a read cycle.
When the CE# and RP# pins are at V
CC
, the I
CC
CMOS standby mode is enabled. A deep power-
down mode is enabled when the RP# pin is at
GND, minimizing power consumption and providing
write protection. I
CC
current in deep power-down is
1 µA typical (2.7V V
CC
). A minimum reset time of
t
PHQV
is required from RP# switching high until
outputs are valid to read attempts. With RP# at
GND, the WSM is reset and Status Register is
cleared. Section 3.5 contains additional information
on using the deep power-down feature, along with
other power consumption issues.
The RP# pin provides additional protection against
unwanted command writes that may occur during
system reset and power-up/down sequences due to
invalid system bus conditions (see Section 3.6).
Refer to the DC Characteristics Table, Sections 5.1
and 6.1, for complete current and voltage
specifications. Refer to the AC Characteristics
Table, Section 7.0, for read, program and erase
performance specifications.
E
2.0
PRODUCT DESCRIPTION
This section explains device pin description and
package pinouts.
6
PRELIMINARY
INTEL [ INTEL CORPORATION ]
