28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
1.0
Introduction
This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory
family, which is optimized for low power, portable systems. This family of products features
1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low V
CC
/V
PP
operating range of 2.7 V–3.6 V for read,
program, and erase operations. In addition this family is capable of fast programming at 12 V.
Throughout this document, the term “2.7 V” refers to the full voltage range 2.7 V–3.6 V (except
where noted otherwise) and “V
PP
= 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an
overview of the flash memory family including applications, pinouts and pin descriptions. Section
3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0
contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other
reference information.
The 3 Volt Advanced Boot Block flash memory features:
•
Enhanced blocking for easy segmentation of code and data or additional design flexibility
•
Program Suspend to Read command
•
V
CCQ
input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and
V
CCQ
location
•
Maximum program and erase time specification for improved data storage.
Table 1.
3 Volt Advanced Boot Block Feature Summary
28F004B3
(2)
, 28F008B3,
28F016B3
28F400B3
(2)
, 28F800B3,
28F160B3, 28F320B3
(3)
,
28F640B3
Reference
Section 4.2, 4.4
Section 4.2, 4.4
16 bit
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit),
2048 Kbit x 16 (32 Mbit),
4096 Kbit x 16 (64 Mbit)
Feature
V
CC
Read Voltage
V
CCQ
I/O Voltage
V
PP
Program/Erase Voltage
Bus Width
Speed
8 bit
512 Kbit x 8 (4 Mbit)
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit)
2.7 V– 3.6 V
1.65 V–2.5 V or 2.7 V– 3.6 V
2.7 V– 3.6 V or 11.4 V– 12.6 V
70 ns, 80 ns, 90 ns, 100 ns, 110 ns
Memory Arrangement
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks
and
Seven 64-Kbyte blocks (4 Mbit) or
Fifteen 64-Kbyte blocks (8 Mbit) or
Thirty-one 64-Kbyte main blocks (16 Mbit)
Sixty-three 64-Kbyte main blocks (32 Mbit)
One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
Extended: –40
°C
to +85
°C
100,000 cycles
40-lead TSOP
(1)
,
48-Ball
µBGA*
CSP
(2)
48-Lead TSOP,
48-Ball
µBGA
CSP
(2)
,
48-Ball VF BGA
(4)
Locking
Operating Temperature
Program/Erase Cycling
Packages
Section 4.2, 4.4
Section 4.2, 4.4
NOTES:
1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.
2. 4-Mbit density not available in
µBGA*
CSP.
3. V
CC
Max is 3.3 V on 0.25µm 32-Mbit devices.
4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.
3UHOLPLQDU\
1
INTEL [ INTEL CORPORATION ]
