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TN28F020-120 参数 Datasheet PDF下载

TN28F020-120图片预览
型号: TN28F020-120
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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E
28F020  
Table 2. 28F020 Bus Operations  
(1)  
Mode  
Read  
VPP  
A0  
A0  
X
A9  
A9  
X
CE# OE#  
WE#  
VIH  
VIH  
X
DQ0–DQ7  
VPPL  
VPPL  
VPPL  
VPPL  
VIL  
VIL  
VIH  
VIL  
VIL  
VIH  
X
Data Out  
Tri-State  
Tri-State  
Data = 89H  
Output Disable  
READ-  
Standby  
X
X
(3)  
ONLY  
Intelligent Identifier  
(Mfr)(2)  
VIL  
VID  
VIL  
VIH  
(3)  
Intelligent Identifier  
(Device)(2)  
VPPL  
VIH  
VID  
VIL  
VIL  
VIH  
Data = BDH  
Read  
VPPH  
VPPH  
VPPH  
VPPH  
A0  
X
A9  
VIL  
VIL  
VIH  
VIL  
VIL  
VIH  
X
VIH  
VIH  
X
Data Out(4)  
Tri-State  
Tri-State  
Data In(6)  
READ/  
WRITE  
Output Disable  
Standby(5)  
Write  
X
X
X
A0  
A9  
VIH  
VIL  
NOTES:  
1. Refer to DC Characteristics. When VPP = VPPL memory contents can be read but not written or erased.  
2. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 3. Al other  
addresses low.  
3.  
VID is the intelligent identifier high voltage. Refer toDC Characteristics.  
4. Read operations with VPP = VPPH may access array data or the intelligent identifier codes.  
5. With VPP at high voltage, the standby current equals ICC + IPP (standby).  
6. Refer to Table 3 for valid data-in during a write operation.  
7. X can be VIL or VIH  
.
The two step program/erase write sequence to the  
command register provides additional software  
write protection.  
2.2  
Write Protection  
The command register is only active when VPP is  
at high voltage. Depending upon the application,  
the system designer may choose to make the VPP  
power supply switchable—available only when  
memory updates are desired. When VPP = VPPL  
the contents of the register default to the Read  
command, making the 28F020 read only  
2.2.1  
BUS OPERATIONS  
Read  
,
2.2.1.1  
a
memory. In this mode, the memory contents  
cannot be altered.  
The 28F020 has two control functions, both of  
which must be logically active, to obtain data at the  
outputs. Chip Enable (CE#) is the power control  
and should be used for device selection. Output  
Enable (OE#) is the output control and should be  
used to gate data from the output pins,  
independent of device selection. Refer to AC read  
timing waveforms.  
Or, the system designer may choose to “hardwire”  
V
PP, making the high voltage supply constantly  
available. In this case, all command register  
functions are inhibited whenever VCC is below the  
write lockout voltage VLKO (see Power-Up/Down  
Protection). The 28F020 is designed to  
accommodate either design practice, and to  
encourage optimization of the processor memory  
interface.  
When VPP is high (VPPH), the read operation can  
be used to access array data, to output the  
intelligent identifier codes, and to access data for  
program/erase verification. When VPP is low (VPPL),  
the read operation can only access the array data.  
9