B-6
01/99
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source
Reverse Transfer Capacitance
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source
Voltage with Temperature
Transconductance Ratio
g
fs
g
os
C
iss
C
dgo
C
rss
NF
| I
G1
– I
G2
|
I
DSS1
/ I
DSS2
| V
GS1
– V
GS2
|
∆V
GS1
– V
GS2
∆T
2N3957
Min
V
(BR)GSS
I
GSS
I
G
V
GS
V
GS(OFF)
V
GS(F)
I
DSS
0.5
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
–4
– 4.5
2
5
Max
2N3958
Min
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
0.5
–4
– 4.5
2
5
Max
Unit
V
pA
nA
pA
nA
V
V
V
V
mA
Process NJ16
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 50 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 1 nA
V
DS
= Ø, I
G
= 1 mA
V
DS
= 20V, V
GS
= ØV
T
A
= 125°C
T
A
= 125°C
1000 3000 1000 3000
1000
35
4
1.5
1.2
0.5
10
0.9
1
20
6
7.5
0.9
1
0.85
0.85
1000
35
4
1.5
1.2
0.5
10
1
25
8
10
1
µS
µS
µS
pF
pF
pF
dB
nA
mV
mV
mV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 10V, I
S
= ØA
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
R
G
= 10 MΩ
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
T
A
= 125°C
T
A
= 25°C
to – 55°C
T
A
= 25°C
to 125°C
g
fs1
/ g
fs2
f = 1 kHz
TOÐ71 Package
See Section G for Outline Dimensions
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
