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2N3993 参数 Datasheet PDF下载

2N3993图片预览
型号: 2N3993
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道硅结型场效应晶体管 [P-Channel Silicon Junction Field-Effect Transistor]
分类和应用: 晶体小信号场效应晶体管
文件页数/大小: 1 页 / 95 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
01/99
B-7
2N3993, 2N3993A
P-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ High Speed Commutators
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
25 V
– 10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Reverse Current
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transmittance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
r
ds(on)
| Y
fs
|
C
iss
C
rss
V
(BR)GSS
V
GS(OFF)
I
DSS
I
DGO
I
D(OFF)
2N3993
Min
25
4
– 10
– 1.2
– 1.2
– 1.2
–1
9.5
Max
2N3993A
Min
25
4
– 10
– 1.2
– 1.2
– 1.2
–1
9.5
Max
Unit
V
V
mA
nA
µA
nA
µA
Process PJ99
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
DS
= – 10V, I
D
= – 1 µA
V
DS
= – 10V, V
GS
= ØV
V
DG
= – 15V, I
S
= ØA
V
DG
= – 15V, I
S
= ØA
V
DS
= – 10V, V
GS
= 10 V
V
DS
= – 10V, V
GS
= 10 V
T
A
= 150°C
T
A
= 150°C
150
6
12
16
4.5
7
150
12
12
3
mS
pF
pF
V
GS
= ØV, I
D
= Ø A
V
DS
= – 10V, V
GS
= ØV
V
DS
= – 10V, V
GS
= ØV
V
DS
= Ø, V
GS
= 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375