B-10
01/99
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A
N-Channel Silicon Junction Field-Effect Transistor
¥
¥
¥
¥
Mixers
Oscillators
VHF Amplifiers
Small Signal Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 150 °C)
– 30 V
10 mA
300 mW
2 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
2N4220A, 2N4221A, 2N4222A
g
fs
| Y
fs
|
g
os
C
iss
C
rss
NF
V
(BR)GSS
I
GSS
V
GS
V
GS(OFF)
I
DSS
2N4220
2N4220A
NJ16
Min
– 30
– 0.1
– 0.1
– 0.5
(50)
0.5
Max
2N4221
2N4221A
NJ16
Min
– 30
– 0.1
– 0.1
Max
2N4222
2N4222A
NJ32
Min
– 30
– 0.1
– 0.1
Max
Unit
V
µA
V
µA
V
mA
Process
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, I
D
= ( )
V
DS
= 15V, I
D
= 0.1 nA
V
DS
= 15V, V
GS
= ØV
T
A
= 150°C
– 2.5 – 1
–5
–2
–6
(50) (200) (200) (500) (500)
–4
3
2
–6
6
5
–8
15
1000
750
4000
2000
750
5000
2500
750
6000
µS
µS
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
R
G
= 1 MΩ
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 100 MHz
10
6
2
2.5
20
6
2
2.5
40
6
2
2.5
µS
pF
pF
dB
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
