B-24
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
¥ High Voltage
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
2N6449
2N6450
– 300 V
– 200 V
– 300 V
– 200 V
10 mA
10 mA
800 mW
800 mW
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V
(BR)GSS
2N6449
Min
– 300
– 100
Max
2N6450
Min
– 200
– 100
Max
Unit
V
nA
nA
µA
– 100
µA
V
mA
–2
2
– 15
10
Process NJ42
Test Conditions
I
G
= – 10 µA, V
DS
= ØV
V
GS
= – 150V, V
V
GS
= – 100V, V
DS
= ØV
V
GS
= – 150V, V
DS
= ØV
V
GS
= – 100V, V
DS
= ØV
V
DS
= 30V, I
D
= 4 nA
V
DS
= 30V, V
GS
= ØV
T
A
= 150°C
T
A
= 150°C
Gate Reverse Current
I
GSS
– 100
–2
2
– 15
10
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transfer Admittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
V
GS(OFF)
I
DSS
Y
fs
Y
os
C
iss
C
rss
0.5
3
100
20
2.5
0.5
3
100
20
2.5
mS
µS
pF
pF
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
