01/99
B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
¥ Low-Noise Preamplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
2N6451
2N6452
– 20 V
– 25 V
– 20 V
– 25 V
10 mA
10 mA
360 mW
360 mW
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V
(BR)GSS
2N6451
Min
– 20
– 0.1
Max
2N6452
Min
– 25
– 0.5
Max
Unit
V
nA
nA
µA
–1
µA
V
mA
Process NJ132L
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= ØV
T
A
= 125°C
T
A
= 125°C
Gate Reverse Current
I
GSS
– 0.2
– 0.5 – 3.5 – 0.5 – 3.5
5
20
5
20
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V
GS(OFF)
I
DSS
| Y
fs
|
| Y
os
|
C
iss
C
rss
e
N
¯
NF
15
30
50
25
5
5
3
1.5
15
30
50
25
5
mS
mS
µS
µS
pF
pF
pF
pF
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
R
G
= 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
10
nV/√Hz
8
2.5
nV/√Hz
dB
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
INTERFET [ INTERFET CORPORATION ]
