B-28
01/99
IF140, IF140A
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain
Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transmittance Y
fs
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Y
os
C
iss
C
rss
V
(BR)GSS
I
GSS
V
GS(OFF)
V
GS
V
GS(F)
I
DSS
IF140
Min
– 20
– 0.1
– 0.2
–6
–5
1
5
15
Max
IF140A
Min
– 20
– 0.1
– 0.2
–6
– 2.5
5
–6
1
15
Max
Unit
V
nA
nA
V
V
V
mA
Process NJ14AL
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, I
D
= 5 nA
V
DS
= 15V, I
D
= 50 µA
V
DS
= Ø, I
G
= 1 mA
V
DS
= 15V, V
GS
= ØV
T
A
= 150°C
4.5
0.05
3
0.6
Typ
4.5
0.05
3
0.6
Typ
4
mS
µS
pF
pF
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
e
N
¯
4
nV/√Hz
V
DS
= 12V, V
GS
= ØV
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
