01/99
D-5
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK146
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 40 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
Differential Gate Source Voltage
g
fs
C
iss
C
rss
NF
|V
GS1
– V
GS2
|
IFN146
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 0.3
– 40
–1
–1
– 1.2
30
Typ
Max
Unit
V
nA
µA
V
mA
Process NJ450
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 µA
V
DS
= 10V, V
GS
= ØV
T
A
= 150°C
30
40
75
15
1
20
mS
pF
pF
dB
mV
V
DS
= 10V, V
GS
= ØV
I
DSS
= 5 mA
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= ØA
V
DS
= 10V, I
D
= 5 mA
R
G
= 100Ω
V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
INTERFET [ INTERFET CORPORATION ]
