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IFN425 参数 Datasheet PDF下载

IFN425图片预览
型号: IFN425
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道硅结型场效应晶体管 [Dual N-Channel Silicon Junction Field-Effect Transistor]
分类和应用: 晶体小信号场效应晶体管放大器
文件页数/大小: 1 页 / 69 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
B-42
01/99
IFN424, IFN425, IFN426
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Very High Impedance
Differential Amplifiers
¥ Electrometers
Absolute maximum ratings at T
A
= 25¡C
Device Dissapation (Derate 3.2 mW/°C to 50°C)
Total Device Dissipation (Derate 6 mW/°C to 150 °C)
Storage Temperature Range
400 mW
750 mW
– 60 °C to 200 °C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate to Gate Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
g
fs
IFN424, IFN425, IFN426
Min
V
(BR)GSS
BV
G1G2
I
GSS
I
G
V
GS(OFF)
V
GS
I
DSS
60
1800
– 0.4
– 40
±40
–3
–3
– 0.5
– 500
–3
– 2.9
Typ
– 60
Max
Unit
V
V
pA
nA
pA
pA
V
V
µA
Process NJ01
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
I
G
= – 1 µA, I
D
= ØA, I
V
GS
= – 20V, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 10V, I
D
= 30 µA
V
DS
= 10V, I
D
= 30 µA
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, I
D
= 30 µA
V
DS
= 10V, V
GS
= Ø V
T
A
= +125°C
T
A
= +125°C
100
1500
3
3
1.5
20
70
1
µS
µS
pF
pF
nV/√Hz
V
DS
= 10V, V
GS
= Ø V
V
DS
= 10V, I
D
= 30 µA
V
DS
= 10V, V
GS
= Ø V
V
DS
= 10V, V
GS
= Ø V
V
DS
= 10V, I
D
= 30 µA
V
DS
= 10V, I
D
= 30 µA
R
G
= 1 MΩ
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 10 Hz
Common Source Output Conductance
Common Source Input Capacitance
Equivalent Short Circuit Input Noise Voltage
g
os
C
iss
e
N
¯
NF
Common Source Reverse Transfer Capacitance
C
rss
Noise Figure
dB
Max - IFN424 IFN425 IFN426
Differential Gate Source Voltage
Differential Gate Source Voltage
With Temperature
|V
GS1
– V
GS2
|
|V
GS1
– V
GS2
|
10
10
15
25
25
40
mV
µV/°C
V
DG
= 10V, I
D
= 30 µA
V
DG
= 10V, I
D
= 30 µA
T
A
= – 55°C
T
B
= 25°C
T
C
= 125°C
∆T
Min - IFN424 IFN425 IFN426
Common Mode Rejection Ratio
CMRR
90
80
80
dB
V
DG
= 10V to 20V, I
D
= 30 µA
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com