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J110A 参数 Datasheet PDF下载

J110A图片预览
型号: J110A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道硅结型场效应晶体管 [N-Channel Silicon Junction Field-Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 1 页 / 95 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
B-50
01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
td
(on)
t
r
td
(off)
t
f
r
ds(on)
C
gd
C
gs
C
gd
+ C
gs
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
J110
Min
– 25
–3
– 0.5
10
3
–4
Max
J110A
Min
– 25
–3
– 0.5
10
3
–4
Max
Unit
V
nA
V
mA
nA
Process NJ450
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
V
DS
= 5V, I
D
= 1 µA
V
DS
= 15V, V
GS
= ØV
V
DS
= 5V, V
GS
= – 10V
18
15
15
85
Typ
4
1
6
30
Typ
4
1
6
30
25
15
15
85
pF
pF
pF
V
GS
= Ø, V
DS
< = 0.1V
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
V
DS
= V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
ns
ns
ns
ns
V
DD
V
GS(OFF)
R
L
J110
1.5
–5
150
J110A
1.5
–5
150
V
V
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ110, SMPJ110A
Pin Configuration
1 Drain, 2 Source, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com