F-2
01/99
NJ01 Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ01 Process.
Datasheet
2N4117, 2N4117A
2N4118, 2N4118A
2N4119, 2N4119A
IFN421, IFN422
IFN423, IFN424
IFN425, IFN426
Datasheet
DPAD1, DPAD2
DPAD5, DPAD10
PAD1, PAD2
PAD5
VCR7N
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
NJ01 Process
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 0.5
0.03
– 40
Typ
– 50
– 0.5
– 10
–6
0.6
Max
Unit
V
pA
V
mA
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 µA
V
DS
= 10V, V
GS
= ØV
g
fs
C
iss
175
2
0.9
µS
pF
pF
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
rss
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
