F-34
01/99
NJ132L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
S-D
G
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ132L Process.
Datasheet
2N6451, 2N6452
2N6453, 2N6454
IF1320
IFN152
2SK152
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
(pulsed)
g
fs
g
fs
C
iss
C
iss
e
N
¯
15
15
15
3.5
1
mS
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
– 0.5
Min
– 15
Typ
– 25
– 50
– 100
100
–7
Max
Unit
V
nA
mA
V
NJ132L Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= ØV
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 4V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
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INTERFET [ INTERFET CORPORATION ]
