F-6
01/99
NJ16 Process
Silicon Junction Field-Effect Transistor
¥ Low Current Switch
¥ General Purpose Amplifier
¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
Die Size = 0.017" X 0.017"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ16 Process.
Datasheet
2N3954, 2N3955
2N3956
2N3957, 2N3958
2N4220, 2N4220A
2N4221, 2N4221A
2N4338, 2N4339
2N4340, 2N4341
2N4867, 2N4867A
2N4868, 2N4868A
2N4869, 2N4869A
Datasheet
2SK17, 2SK40
2SK59, 2SK105
IFN17, IFN40
IFN59, IFN105
Datasheet
J504, J505
J506, J507
J508, J509
J510, J511
J553, J554
J555, J556
J557
U553, U554
U555, U556
U557
VCR4N
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
2.2
3.5
1.2
6
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
0.2
– 0.8
Min
– 50
Typ
– 60
– 10
– 100
9
– 5.5
Max
Unit
V
pA
mA
V
NJ16 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 10V, I
D
= 5 mA
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
