F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥
¥
¥
¥
Low-Current
Low Gate Leakage Current
High Input Impedance
Low-Noise
10 mA
+150°C
– 65°C to +175°C
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
Device in this Databook based on the NJ1800DL Process.
Datasheet
IF1801
Die Size = 0.052" X 0.052"
All Bond Pads
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
350
160
50
0.7
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
50
– 0.1
Min
– 15
Typ
– 25
– 30
– 100
800
–4
Max
Unit
V
pA
mA
V
NJ1800DL Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
I
D
= 1 mA, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DG
= 4V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
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