F-44
01/99
NJ1800D Process
Silicon Junction Field-Effect Transistor
¥ Ultra Low-Noise Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
D
G
Devices in this Databook based on the NJ1800D Process.
Datasheet
U290, U291
Die Size = 0.052" X 0.052"
All Bond Pads
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
g
fs
r
ds(on)
C
iss
C
rss
2
100
50
350
7
mS
Ω
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
50
– 0.1
Min
– 20
Typ
– 30
– 30
– 100
1000
–7
Max
Unit
V
pA
mA
V
NJ1800D Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
I
D
= 1 mA, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
