F-18
01/99
NJ32 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
Die Size = 0.018" X 0.018"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ32 Process.
Datasheet
2N3821, 2N3822
2N3823, 2N3824
2N4222, 2N4222A
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
4
6
1.3
7
7.0
3
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
1
– 0.5
Min
– 25
Typ
– 50
– 10
– 100
22
–6
Max
Unit
V
pA
mA
V
NJ32 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 10V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
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