F-36
01/99
NJ450 Process
Silicon Junction Field-Effect Transistor
¥ LOW R(on) Switch
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
G
Devices in this Databook based on the NJ450 Process.
Datasheet
2SK363
IFN146, IFN147
IFN363
J108, J109
J110, J110A
G
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
r
ds(on)
g
fs
C
iss
C
rss
7
250
20
10
Ω
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
– 0.1
Min
– 25
Typ
– 30
– 50
– 1000
600
– 10
Max
Unit
V
pA
mA
V
NJ450 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
I
D
= 1 mA, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
