F-28
01/99
NJ72L Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
S-D
G
Die Size = 0.020" X 0.020"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ72L Process.
Datasheet
U310
U311
U350
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
g
fs
r
ds(on)
C
iss
C
rss
22
40
7
2.5
mS
Ω
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
–1
Min
– 20
Typ
– 25
– 10
– 100
90
– 5.5
Max
Unit
V
pA
mA
V
NJ72L Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
I
D
= 1 mA, V
GS
= ØV
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
