F-42
01/99
NJ903L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
G
D-S
Device in this Databook based on the NJ903L Process.
S-D
Datasheet
IF9030
G
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
C
iss
C
rss
e
N
¯
50
18
0.5
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
– 0.1
Min
– 20
Typ
– 25
–5
– 500
500
–3
Max
Unit
V
pA
mA
V
NJ903L Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DG
= 4V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
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