F-40
01/99
NJ903 Process
Silicon Junction Field-Effect Transistor
¥ Analog Switch
¥ Digital Switch
¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
G
D-S
Devices in this Databook based on the NJ903 Process.
S-D
Datasheet
IFN5432
IFN5433
IFN5434
G
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
r
ds(on)
C
iss
C
iss
t
d(on)
t
r
t
d(off)
t
f
5
45
22
7
1
12
2
Ω
pF
pF
ns
ns
ns
ns
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
100
–2
Min
– 25
Typ
– 40
– 0.1
–1
900
–7
Max
Unit
V
nA
mA
V
NJ903 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
I
D
= 1 mA, V
GS
= Ø
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
V
DD
= 1.5V, I
D(ON)
= 30 mA
R
L
= 50
Ω,
V
GS(ON)
= ØV
V
GS(OFF)
= – 7V
f = 1 kHz
f = 1 MHz
f = 1 MHz
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
