MS7204-A2
PRESSURE SENSOR DIE (0-4 BAR)
FOR HARSH ENVIRONMENT
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0 to 400 kPa range (4 bar or 58 PSI)
Uncompensated absolute pressure sensor die
Piezoresistive silicon micromachined sensor
Hermetic sensor, temperature up to 150°
C
Pads on one side
RoHS-compatible & Pb-free
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DESCRIPTION
The MS7204-A2 is an absolute silicon micro-machined pressure sensor for harsh environment, with the pads on
one side. A vacuum reference cavity is sealed on top of the sensitive silicon membrane by the anodic bonding of
a glass cap. The pressure, applied on the backside, is converted in electrical signal by piezo-resistors implanted
in the silicon membrane. To improve the sensor stability, a drilled glass is bonded on the backside. As the
pressure port consists of glass and silicon, both stable in most of the chemicals, the MS7204-A2 is suitable for
media-resistive applications.
FEATURES
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Media resistive pressure sensor die
Typical output Span 150mV @ 5 V
Temperature range -40°
…+150°
C
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Linearity 0.15% (typical)
Die size 1.35 x 1.79 mm
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Low cost, high reliability & stability
APPLICATION
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Harsh environments
Absolute pressure sensor systems
ELECTRICAL CONNECTIONS
Pin
1
2
3
4
5
Symbol
EPI / I diode (-)
Vs+ / I diode (+)
Out+
GND
Out-
Description
Epi contact / Cathode of diode (n)
Supply voltage / Anode of diode (p)
Positive output*
Ground
Negative output*
*Positive output for pressure applied backside
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The European RoHS directive 2002/95/EC (Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)
bans the use of lead, mercury, cadmium, hexavalent chromium and polybrominated biphenyls (PBB) or polybrominated diphenyl ethers
(PBDE).
DA7204-A2_000.doc
000072041502
ECN 1209
April 24, 2009
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