HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
PARAMETER
Power Gain-Bandwidth Product,
f
MAX
Base to Emitter Capacitance
Collector to Base Capacitance
T
A
= 25°C
(Continued)
DIE
TEST CONDITIONS
I
C
= 10mA, V
CE
= 5V
V
BE
= -3V
V
CB
= 3V
T
A
= 25°C
DIE
PARAMETER
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
(BR)CES
Emitter to Base Breakdown
Voltage, V
(BR)EBO
Collector Cutoff Current, I
CEO
Collector Cutoff Current, I
CBO
Collector to Emitter Saturation
Voltage, V
CE(SAT)
Base to Emitter Voltage, V
BE
DC Forward-Current Transfer
Ratio, h
FE
Early Voltage, V
A
Base to Emitter Voltage Drift
Collector to Collector Leakage
I
C
= -100µA, I
E
= 0
I
C
= -100µA, I
B
= 0
I
C
= -100µA, Base Shorted to Emitter
I
E
= -10µA, I
C
= 0
V
CE
= -6V, I
B
= 0
V
CB
= -8V, I
E
= 0
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA
I
C
= -10mA, V
CE
= -2V
I
C
= -1mA, V
CE
= -3.5V
I
C
= -10mA
10
8
10
4.5
-
-
-
-
20
10
-
-
T
A
= 25°C
DIE
PARAMETER
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f
T
Current Gain-Bandwidth
Product
Power Gain-Bandwidth
Product
Base to Emitter Capacitance
Collector to Base Capacitance
f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50Ω
I
C
= -1mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
V
BE
= 3V
V
CB
= -3V
-
-
-
-
-
-
3.5
2
5.5
3
200
300
-
-
-
-
-
-
-
-
-
-
-
-
3.5
2
5.5
2
500
600
-
-
-
-
-
-
dB
GHz
GHz
GHz
fF
fF
TEST CONDITIONS
MIN
TYP
MAX
MIN
SOIC, QFN
TYP
MAX
UNITS
15
15
15
5
2
0.1
0.3
0.85
60
20
-1.5
1
-
-
-
-
100
10
0.5
0.95
-
-
-
-
10
8
10
4.5
-
-
-
-
20
10
-
-
15
15
15
5
2
0.1
0.3
0.85
60
20
-1.5
1
-
-
-
-
100
10
0.5
0.95
-
-
-
-
V
mV/°C
pA
V
V
V
V
nA
nA
V
V
TEST CONDITIONS
MIN
TYP
MAX
MIN
SOIC, QFN
TYP
MAX
UNITS
MIN
-
-
-
TYP
6
200
200
MAX
-
-
-
MIN
-
-
-
SOIC, QFN
TYP
2.5
500
500
MAX
-
-
-
UNITS
GHz
fF
fF
Electrical Specifications
Electrical Specifications
4
FN3076.13
December 21, 2005
INTERSIL [ INTERSIL CORPORATION ]
