ISL73096RH, ISL73127RH, ISL73128RH
Die Characteristics
DIE DIMENSIONS:
52.8 mils x 52.0 mils x 14 mils
±1
mil
1340μm x 1320µm x 355.6µm
±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
Å
±0.5k
Å
Top Metallization:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8k
Å
±0.5k
Å
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16k
Å
±0.8k
Å
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
3.04 x 10
5
A/cm
2
Transistor Count:
5
Metallization Mask Layout
(2) Q2C (1) Q1C(16) Q1E
(15) Q1B
(3) Q2E
(14) Q5
(4) Q2B
(13) Q5
(5) NC
(12) Q5
(6) Q3C
(11) Q4
(7) Q3E (8) Q3B (9) Q4B(10) Q4E
FIGURE 1. ISL73096RH, ISL73127RH
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3
FN6475.3
November 12, 2009
INTERSIL [ INTERSIL CORPORATION ]
