HS-65647RH
Irradiation Circuit
HS-65647RH (8K x 8 TSOS4 SRAM) 28 LEAD CERAMIC DIP
VDD
NC
1 NC
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
8 A2
9 A1
10 A0
11 DQ0
12 DQ1
13 DQ2
14 VSS
VDD 28
W 27
E2 26
A8 25
A9 24
A11 23
G 22
A10 21
E1 20
DQ7 19
DQ6 18
DQ5 17
DQ4 16
DQ3 15
NOTES:
17. VDD = 5.5V
±0.5V
R = 10kΩ
±10%.
18. Group E sample size is two die/wafer.
Test Patterns
MARCH (II) PATTERN
After a background of zeros is written, each cell (from
beginning to end in sequence) is read, written to a one and
reread. When the array is full of ones each cell (from the end
to the beginning) is read, restored to a zero and reread.
After this the pattern is repeated but with complemented
data.
This is pattern then repeated but using complemented data.
GALCOL PATTERN (Column Galloping Pattern)
After a background of zeros is written into the memory a one
is written into the first cell. It is then read alternately with
each other cell in the column. The test cell is then rewritten
back to a zero. The test cell is then incremented and the
sequence is repeated until all cells in the memory have been
used as a test cell.
This is pattern then repeated but using complemented data.
MASEST PATTERN (Multiple Address Select
Pattern)
A checkerboard pattern is written into the memory. Then the
first cell is read, then its binary address complement is read.
The second cell is read and then its binary address
complement is read. This pattern of incrementing the
address and then reading its binary address complement is
repeated until the entire memory is read.
This is then repeated but using a checkerboard bar pattern.
CHECKERBOARD PATTERN and
CHECKERBOARD BAR
A checkerboard is written (101010) into the memory and
then the pattern is read back. This is then repeated but using
complemented data.
GALROW PATTERN (Row Galloping Pattern)
After a background of zeros is written into the memory a one
is written into the first cell. It is then read alternately with
each other cell in the row. The test cell is then rewritten back
to a zero. The test cell is then incremented and the
sequence is repeated until all cells in the memory have been
used as a test cell.
7
INTERSIL [ INTERSIL CORPORATION ]
