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5962R9578601VXC 参数 Datasheet PDF下载

5962R9578601VXC图片预览
型号: 5962R9578601VXC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射的8位双向CMOS / TTL电平转换器 [Radiation Hardened 8-Bit Bidirectional CMOS/TTL Level Converter]
分类和应用: 转换器电平转换器触发器逻辑集成电路
文件页数/大小: 6 页 / 42 K
品牌: INTERSIL [ Intersil ]
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Specifications HS-3374RH  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
LIMITS  
GROUP A SUB-  
PARAMETER  
SYMBOL  
GROUPS  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
o
o
Propagation Delay Time TTL/CMOS  
Enable to CMOS Out  
TPZLTC  
9, 10, 11  
-55 C, +25 C, +125 C  
-
-
-
-
-
90  
ns  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
TPHZCT  
TPZHCT  
TPLZCT  
TPZLCT  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
-55 C, +25 C, +125 C  
70  
ns  
ns  
ns  
ns  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
-55 C, +25 C, +125 C  
130  
120  
125  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
-55 C, +25 C, +125 C  
o
o
o
Propagation Delay Time CMOS/TTL  
Disable to TTL Out  
-55 C, +25 C, +125 C  
NOTE: Timings are measured with the following conditions: CL = 100pF, VDD = 9.5V, VCC = 4.75V, VIH = 8.5V (2.8V), VIL = 1.0V (0.8V).  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
PARAMETER  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
Input, Output Capacitance  
CMOS  
CI/O  
VDD = Open, f = 1MHz, All Measure-  
ments Referenced to Device Ground  
+25 C  
-
13  
pF  
o
Input Capacitance  
CIN  
VDD = Open, f = 1MHz, All Measure-  
ments Referenced to Device Ground  
+25 C  
-
-
15  
17  
pF  
pF  
o
Input, Output Capcitance  
TTL  
CI/O  
VDD = Open, f = 1MHz, All Measure-  
ments Referenced to Device Ground  
+25 C  
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters  
are characterized upon initial design release and upon design changes which would affect these characteristics.  
Spec Number 518052  
4