BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power
MOSFET
Features
• 9.5A, 200V
[ /Title
This is an N-Channel enhancement mode silicon gate power
• r
DS(ON)
= 0.400Ω
(BUZ32)
field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
/Subject
switching regulators, switching converters, motor drivers,
• Nanosecond Switching Speeds
(9.5A,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
200V,
• Linear Transfer Characteristics
This type can be operated directly from integrated circuits.
0.400
• High Input Impedance
Ohm, N-
Formerly developmental type TA17412.
• Majority Carrier Device
Channel
• Related Literature
Power
Ordering Information
- TB334 “Guidelines for Soldering Surface Mount
PART NUMBER
PACKAGE
BRAND
MOS-
Components to PC Boards”
BUZ32
TO-220AB
BUZ32
FET)
/Author
NOTE: When ordering, use the entire part number.
Symbol
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel
Power
Packaging
MOS-
JEDEC TO-220AB
FET,
TO-
SOURCE
DRAIN
220AB)
GATE
/Creator
DRAIN (FLANGE)
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
©
Harris Corporation 1998
INTERSIL [ INTERSIL CORPORATION ]
