FRM140D, FRM140R, FRM140H
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
(Note 4, 6)
(Note 5, 6)
Gate-Source
Threshold Volts
(Note 4, 6)
(Note 3, 5, 6)
Gate-Body
Leakage Forward
(Note 4, 6)
(Note 5, 6)
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
(Note 2, 5, 6)
Zero-Gate Voltage
Drain Current
(Note 4, 6)
(Note 5, 6)
Drain-Source
On-State Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/25/90 on TA 17641 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
SYMBOL
BVDSS
BVDSS
VGS(th)
VGS(th)
IGSSF
IGSSF
IGSSR
IGSSR
IDSS
IDSS
VDS(on)
VDS(on)
RDS(on)
RDS(on)
TYPE
FRM140D, R
FRM140H
FRM140D, R
FRM140H
FRM140D, R
FRM140H
FRM140D, R
FRM140H
FRM140D, R
FRM140H
FRM140D, R
FRM140H
FRM140D, R
FRM140H
TEST CONDITIONS
VGS = 0, ID = 1mA
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 80V
VGS = 0, VDS = 80V
VGS = 10V, ID = 23A
VGS = 16V, ID = 23A
VGS = 10V, ID = 15A
VGS = 14V, ID = 15A
MIN
100
95
2.0
1.5
-
-
-
-
-
-
-
-
-
-
MAX
-
-
4.0
4.5
100
200
100
200
25
100
3.14
4.83
0.130
0.200
UNITS
V
V
V
V
nA
nA
nA
nA
µA
µA
V
V
Ω
Ω
4-3
INTERSIL [ INTERSIL CORPORATION ]
