HUF75639G3, HUF75639P3, HUF75639S3S
Data Sheet
October 1999
File Number
4477.7
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75639.
Features
• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE
TM
and SABER
©
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75639G3
HUF75639P3
HUF75639S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75639G
75639P
75639S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
SABER
©
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999