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IRF530N 参数 Datasheet PDF下载

IRF530N图片预览
型号: IRF530N
PDF下载: 下载PDF文件 查看货源
内容描述: 22A , 100V , 0.064 Ohm的N通道功率MOSFET [22A, 100V, 0.064 Ohm, N-Channel Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 128 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF530N
TM
Data Sheet
March 2000
File Number
4843
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.064Ω,
V
GS
=
10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
DRAIN
(FLANGE)
Symbol
D
Ordering Information
PART NUMBER
IRF530N
G
PACKAGE
TO-220AB
BRAND
IRF530N
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF530N
UNITS
V
V
V
A
A
100
100
±20
22
15
Figure 4
Figures 6, 14, 15
85
0.57
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation. SABER© is a Copyright of Analogy Inc.
1-888-INTERSIL or 321-724-7143
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Intersil and Design is a trademark of Intersil Corporation.
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Copyright
©
Intersil Corporation 2000