IRF720
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
G
D
MIN
-
-
TYP
-
-
MAX
3.3
13
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 3.3A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 3.3A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 3.3A, dI
SD
/dt = 100A/µs
-
120
0.64
-
-
-
1.6
600
3.0
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 31µH, R
GS
= 25Ω, peak I
AS
= 3.3A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
5
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
4
3
2
1
0
50
100
150
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
3.0
Z
θJC
, TRANSIENT
THERMAL IMPEDANCE (
o
C/W)
0.5
0.2
0.1
0.05
0.1
0.02
0.01
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
P
DM
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.1
1
10
t
1
t
2
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-3
INTERSIL [ INTERSIL CORPORATION ]
